RS3AHE3_A/I

Производитель-деталь №
RS3AHE3_A/I
Производитель
Vishay
Упаковка/футляр
-
Техническое описание
RS3AHE3_A/I
Описание
DIODE GEN PURP 50V 3A DO214AB
lang_0071
35000

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lang_0872 :
Vishay
Категория товара :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
44pF @ 4V, 1MHz
Current - Average Rectified (Io) :
3A
Current - Reverse Leakage @ Vr :
10 µA @ 50 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
DO-214AB, SMC
Product Status :
Active
Reverse Recovery Time (trr) :
150 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
DO-214AB (SMC)
Voltage - DC Reverse (Vr) (Max) :
50 V
Voltage - Forward (Vf) (Max) @ If :
1.3 V @ 2.5 A
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RS3AHE3_A/I

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Продукты, связанные с каталогом

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    DIODE GP 100V 215MA TO236AB

Сопутствующие товары

Деталь Производитель Склад Описание
RS3A SMC Diode Solutions 35,000 DIODE GEN PURP 50V 3A SMC
RS3A Taiwan Semiconductor 35,000 DIODE GEN PURP 50V 3A DO214AB
RS3A M6 Taiwan Semiconductor 35,000 DIODE GENERAL PURPOSE DO214AB
RS3A M6G Taiwan Semiconductor 35,000 DIODE GEN PURP 50V 3A DO214AB
RS3A R6 Taiwan Semiconductor 35,000 DIODE GENERAL PURPOSE DO214AB
RS3A R6G Taiwan Semiconductor 35,000 DIODE GENERAL PURPOSE DO214AB
RS3A R7 Taiwan Semiconductor 35,000 DIODE GENERAL PURPOSE DO214AB
RS3A R7G Taiwan Semiconductor 35,000 DIODE GEN PURP 50V 3A DO214AB
RS3A V6G Taiwan Semiconductor 35,000 DIODE GEN PURP 50V 3A DO214AB
RS3A V7G Taiwan Semiconductor 35,000 DIODE GEN PURP 50V 3A DO214AB
RS3A-13 Diodes Incorporated 35,000 DIODE GEN PURP 50V 3A SMC
RS3A-13-F Diodes Incorporated 8,421 DIODE GEN PURP 50V 3A SMC
RS3A-E3/57T Vishay 35,000 DIODE GEN PURP 50V 3A DO214AB
RS3A-E3/9AT Vishay 35,000 DIODE GEN PURP 50V 3A DO214AB
RS3A-M3/57T Vishay 35,000 DIODE GEN PURP 50V 3A DO214AB