UG06B

Производитель-деталь №
UG06B
Производитель
Taiwan Semiconductor
Упаковка/футляр
-
Техническое описание
UG06B
Описание
DIODE GEN PURP 100V 600MA TS-1
lang_0071
35000

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lang_0872 :
Taiwan Semiconductor
Категория товара :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
9pF @ 4V, 1MHz
Current - Average Rectified (Io) :
600mA
Current - Reverse Leakage @ Vr :
5 µA @ 100 V
Diode Type :
Standard
Mounting Type :
Through Hole
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
T-18, Axial
Product Status :
Active
Reverse Recovery Time (trr) :
15 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
TS-1
Voltage - DC Reverse (Vr) (Max) :
100 V
Voltage - Forward (Vf) (Max) @ If :
950 mV @ 600 mA
lang_0258
UG06B

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Сопутствующие товары

Деталь Производитель Склад Описание
UG06A Taiwan Semiconductor 35,000 DIODE GEN PURP 50V 600MA TS-1
UG06A A0G Taiwan Semiconductor 35,000 DIODE GEN PURP 50V 600MA TS-1
UG06A A1G Taiwan Semiconductor 35,000 DIODE GEN PURP 50V 600MA TS-1
UG06A-E3/54 Vishay 35,000 DIODE GEN PURP 50V 600MA MPG06
UG06AH Taiwan Semiconductor 35,000 DIODE GEN PURP 50V 600MA TS-1
UG06AHA0G Taiwan Semiconductor 35,000 DIODE GEN PURP 50V 600MA TS-1
UG06AHA1G Taiwan Semiconductor 35,000 DIODE GEN PURP 50V 600MA TS-1
UG06B A0G Taiwan Semiconductor 35,000 DIODE GEN PURP 100V 600MA TS-1
UG06B A1G Taiwan Semiconductor 35,000 DIODE GEN PURP 100V 600MA TS-1
UG06B-E3/54 Vishay 35,000 DIODE GEN PURP 100V 600MA MPG06
UG06BH Taiwan Semiconductor 35,000 DIODE GEN PURP 100V 600MA TS-1
UG06BHA0G Taiwan Semiconductor 35,000 DIODE GEN PURP 100V 600MA TS-1
UG06BHA1G Taiwan Semiconductor 35,000 DIODE GEN PURP 100V 600MA TS-1
UG06C Taiwan Semiconductor 35,000 DIODE GEN PURP 150V 600MA TS-1
UG06C A0G Taiwan Semiconductor 35,000 DIODE GEN PURP 150V 600MA TS-1