RS1JHE3_A/I

Производитель-деталь №
RS1JHE3_A/I
Производитель
Vishay
Упаковка/футляр
-
Техническое описание
RS1JHE3_A/I
Описание
DIODE GEN PURP 600V 1A DO214AC
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lang_0872 :
Vishay
Категория товара :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
7pF @ 4V, 1MHz
Current - Average Rectified (Io) :
1A
Current - Reverse Leakage @ Vr :
5 µA @ 600 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
DO-214AC, SMA
Product Status :
Active
Reverse Recovery Time (trr) :
250 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
DO-214AC (SMA)
Voltage - DC Reverse (Vr) (Max) :
600 V
Voltage - Forward (Vf) (Max) @ If :
1.3 V @ 1 A
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RS1JHE3_A/I

Продукты, связанные с производителем

Продукты, связанные с каталогом

  • ROHM Semiconductor
    DIODE SCHOTTKY 650V 10A TO263AB
  • onsemi
    DIODE GEN PURP 100V 200MA DO35
  • SMC Diode Solutions
    DIODE GEN PURP 400V 1A SMA
  • SMC Diode Solutions
    DIODE GEN PURP 1KV 1A SMA
  • Nexperia
    DIODE GP 100V 215MA TO236AB

Сопутствующие товары

Деталь Производитель Склад Описание
RS1J SMC Diode Solutions 246,532 DIODE GEN PURP 600V 1A SMA
RS1J onsemi 35,000 DIODE GEN PURP 600V 1A SMA
RS1J Taiwan Semiconductor 35,000 DIODE GEN PURP 600V 1A DO214AC
RS1J R3G Taiwan Semiconductor 10,356 DIODE GEN PURP 600V 1A DO214AC
RS1J-13 Diodes Incorporated 35,000 DIODE GEN PURP 600V 1A SMA
RS1J-13-F Diodes Incorporated 58,608 DIODE GEN PURP 600V 1A SMA
RS1J-13-G Diodes Incorporated 35,000 DIODE GENERAL PURPOSE SMA
RS1J-E3/5AT Vishay 71,863 DIODE GEN PURP 600V 1A DO214AC
RS1J-E3/61T Vishay 81,111 DIODE GEN PURP 600V 1A DO214AC
RS1J-E3S/61T Vishay 35,000 DIODE GEN PURP 600V
RS1J-HF Comchip Technology 4,200 RECTIFIER FAST RECOVERY 600V 1A
RS1J-M3/5AT Vishay 35,000 DIODE GEN PURP 600V 1A DO214AC
RS1J-M3/61T Vishay 35,000 DIODE GEN PURP 600V 1A DO214AC
RS1J/1 Vishay 35,000 DIODE GEN PURP 600V 1A DO214AC
RS1JAL Taiwan Semiconductor 5,850 250NS, 1A, 600V, FAST RECOVERY R