ES2F

Производитель-деталь №
ES2F
Производитель
Diotec Semiconductor
Упаковка/футляр
-
Техническое описание
ES2F
Описание
DIODE SFR SMB 300V 2A
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3000

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lang_0872 :
Diotec Semiconductor
Категория товара :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
-
Current - Average Rectified (Io) :
2A
Current - Reverse Leakage @ Vr :
5 µA @ 300 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-50°C ~ 150°C
Package / Case :
DO-214AA, SMB
Product Status :
Active
Reverse Recovery Time (trr) :
25 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
DO-214AA (SMB)
Voltage - DC Reverse (Vr) (Max) :
300 V
Voltage - Forward (Vf) (Max) @ If :
1.3 V @ 2 A
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ES2F

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Сопутствующие товары

Деталь Производитель Склад Описание
ES2F Taiwan Semiconductor 35,000 DIODE GEN PURP 300V 2A DO214AA
ES2F Diotec Semiconductor 35,000 SF Rect, 300V, 2.00A, 25ns
ES2F R5G Taiwan Semiconductor 35,000 DIODE GEN PURP 300V 2A DO214AA
ES2F-E3/52T Vishay 14,246 DIODE GEN PURP 300V 2A DO214AA
ES2F-E3/5BT Vishay 9,142 DIODE GEN PURP 300V 2A DO214AA
ES2F-M3/52T Vishay 35,000 DIODE GEN PURP 300V 2A DO214AA
ES2F-M3/5BT Vishay 35,000 DIODE GEN PURP 300V 2A DO214AA
ES2FA Taiwan Semiconductor 35,000 DIODE GEN PURP 300V 2A DO214AC
ES2FA R3G Taiwan Semiconductor 52 DIODE GEN PURP 300V 2A DO214AC
ES2FAH Taiwan Semiconductor 35,000 DIODE GEN PURP 300V 2A DO214AC
ES2FAHR3G Taiwan Semiconductor 1,852 DIODE GEN PURP 300V 2A DO214AC
ES2FH Taiwan Semiconductor 35,000 DIODE GEN PURP 300V 2A DO214AA
ES2FHE3/52T Vishay 35,000 DIODE GEN PURP 300V 2A DO214AA
ES2FHE3/5BT Vishay 35,000 DIODE GEN PURP 300V 2A DO214AA
ES2FHE3_A/H Vishay 35,000 DIODE GEN PURP 300V 2A DO214AA