HN2D02FUTW1T1G
- Производитель-деталь №
- HN2D02FUTW1T1G
- Производитель
- onsemi
- Упаковка/футляр
- -
- Техническое описание
- HN2D02FUTW1T1G
- Описание
- DIODE ARRAY GP 80V 100MA SC88
- lang_0071
- 35000
Запросить предложение (ЗКП)
- * lang_0862:
- Компания:
- * Электронная почта:
- Телефон:
- Комментарий:
- lang_0872 :
- onsemi
- Категория товара :
- Discrete Semiconductor Products > Diodes - Rectifiers - Arrays
- Current - Average Rectified (Io) (per Diode) :
- 100mA (DC)
- Current - Reverse Leakage @ Vr :
- 100 nA @ 75 V
- Diode Configuration :
- 3 Independent
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- 150°C (Max)
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- 3 ns
- Speed :
- Small Signal =< 200mA (Io), Any Speed
- Supplier Device Package :
- SC-88/SC70-6/SOT-363
- Voltage - DC Reverse (Vr) (Max) :
- 80 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.2 V @ 100 mA
- lang_0258
- HN2D02FUTW1T1G
Продукты, связанные с производителем
Продукты, связанные с каталогом
Сопутствующие товары
| Деталь | Производитель | Склад | Описание |
|---|---|---|---|
| HN2D01FTE85LF | Toshiba Electronic Devices and Storage Corporation | 1,833 | DIODE ARRAY GP 80V 80MA SC74 |
| HN2D01FU(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 35,000 | DIODE ARRAY GP 80V 80MA US6 |
| HN2D01JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 35,000 | DIODE ARRAY GP 80V 100MA ESV |
| HN2D02FU,LF | Toshiba Electronic Devices and Storage Corporation | 2,560 | INDEPENDENT SWITCHING DIODE 80V |
| HN2D02FUTW1T1 | onsemi | 35,000 | DIODE SWITCH 100MA 85V SOT363 |
| HN2D03F(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 35,000 | DIODE ARRAY GP 400V 100MA SM6 |
