Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max)：
-
- DC Current Gain (hFE) (Min) @ Ic, Vce：
-
- Frequency - Transition：
-
- Package / Case：
-
- Power - Max：
-
- Resistor - Base (R1)：
-
- Resistor - Emitter Base (R2)：
-
- Supplier Device Package：
-
- Transistor Type：
-
- Vce Saturation (Max) @ Ib, Ic：
-
4 Записи
| Изображение | Деталь | Производитель | Описание | Stock | Действие | |
|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
35,000
In-stock
|
Получить предложение | ||
|
|
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
35,000
In-stock
|
Получить предложение | ||
|
|
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS PN... |
35,000
In-stock
|
Получить предложение | ||
|
|
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS PN... |
35,000
In-stock
|
Получить предложение |
