JAN2N2857

Manufacturer :

Microsemi

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

40mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3mA, 1V

Frequency - Transition :

500MHz

Gain :

12.5dB ~ 21dB @ 450MHz

Mounting Type :

Through Hole

Noise Figure (dB Typ @ f) :

4.5dB @ 450MHz

Operating Temperature :

-65°C ~ 200°C (TJ)

Package / Case :

TO-72-3 Metal Can

Power - Max :

200mW

Product Status :

Obsolete

Supplier Device Package :

TO-72

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V