BFU630F,115

Manufacturer :

NXP Semiconductors

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

30mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 5mA, 2V

Frequency - Transition :

21GHz

Gain :

13dB ~ 22.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-343F

Power - Max :

200mW

Product Status :

Active

Supplier Device Package :

4-DFP

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

5.5V