EMZ8T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

150mA, 500mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA, 6V / 270 @ 10mA, 2V

Frequency - Transition :

180MHz, 260MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-563, SOT-666

Power - Max :

150mW

Product Status :

Active

Supplier Device Package :

EMT6

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA, 250mV @ 10mA, 200mA

Voltage - Collector Emitter Breakdown (Max) :

50V, 12V