W66BQ6NBUAFJ TR

制造商 :

Winbond Electronics Corporation

产品分类 :

记忆 > 记忆

Access Time :

3.5 ns

Clock Frequency :

1.6 GHz

Memory Format :

DRAM

Memory Interface :

LVSTL_11

Memory Size :

2Gb (128M x 16)

Memory Type :

Volatile

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 105°C (TC)

Package / Case :

200-WFBGA

Product Status :

Active

Supplier Device Package :

200-WFBGA (10x14.5)

Technology :

SDRAM - Mobile LPDDR4X

Voltage - Supply :

1.06V ~ 1.17V, 1.7V ~ 1.95V

Write Cycle Time - Word, Page :

18ns