27C512-55DM/B
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- 制造商 :
- Rochester Electronics
- 产品分类 :
- 记忆 > 记忆
- Access Time :
- 55 ns
- Clock Frequency :
- -
- Memory Format :
- EPROM
- Memory Interface :
- Parallel
- Memory Size :
- 512Kb (64K x 8)
- Memory Type :
- Non-Volatile
- Mounting Type :
- Through Hole
- Operating Temperature :
- 0°C ~ 70°C (TA)
- Product Status :
- Active
- Supplier Device Package :
- 32-CDIP
- Technology :
- EPROM - OTP
- Voltage - Supply :
- 4.5V ~ 5.5V
- Write Cycle Time - Word, Page :
- -
- 数据列表
- 27C512-55DM/B
制造商相关产品
目录相关产品
相关产品
| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| 27C512-12/L092 | Microchip Technology | 35,000 | 512K (64K X 8) CMOS EPROM |
| 27C512-12/L093 | Microchip Technology | 35,000 | 512K (64K X 8) CMOS EPROM |
| 27C512-15/LP | Microchip Technology | 6,659 | 512K (64K X 8) CMOS EPROM |
| 27C512-15/PQTP | Microchip Technology | 780 | 512K (64K X 8) CMOS EPROM |
| 27C512-150JI | Rochester Electronics | 45 | 256K (32K X 8) CMOS EPROM |
| 27C512-200DM/B | Rochester Electronics | 35,000 | 27C512 - 512K (64K X 8) CMOS EPR |
| 27C512-25B/UC | Microchip Technology | 35,000 | 512K (64K X 8) CMOS EPROM |
| 27C512-70WMB | Infineon Technologies | 25 | 512K (64KX8) CMOS EPROM |
| 27C512-75DC | Rochester Electronics | 56 | 512K (64K X 8) CMOS EPROM |
| 27C512AE200/883C | National Semiconductor | 130 | 512K (64KX8) CMOS EPROM |
