F3L150R07W2E3B11BOMA1
- 制造商零件号
- F3L150R07W2E3B11BOMA1
- 包装/案例
- -
- 描述
- IGBT MOD 650V 150A 335W
- 库存
- 6
请求报价（RFQ）
- * 联系人姓名:
- 公司:
- * 电子邮件:
- 电话:
- 评论:
- 制造商 :
- Infineon Technologies
- 产品分类 :
- 分立半导体产品 > 晶体管 - IGBT - 模块
- Configuration :
- Three Phase Inverter
- Current - Collector (Ic) (Max) :
- 150 A
- Current - Collector Cutoff (Max) :
- 1 mA
- IGBT Type :
- Trench Field Stop
- Input :
- Standard
- Input Capacitance (Cies) @ Vce :
- 9.3 nF @ 25 V
- Mounting Type :
- Chassis Mount
- NTC Thermistor :
- Yes
- Operating Temperature :
- -40°C ~ 150°C
- Package / Case :
- Module
- Power - Max :
- 335 W
- Product Status :
- Active
- Supplier Device Package :
- Module
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 15V, 150A
- Voltage - Collector Emitter Breakdown (Max) :
- 650 V
制造商相关产品
目录相关产品
相关产品
| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| F3L100R07W2E3B11BOMA1 | Infineon Technologies | 4 | IGBT MOD 650V 117A 300W |
| F3L100R07W2H3B11BPSA1 | Infineon Technologies | 15 | LOW POWER EASY AG-EASY2B-411 |
| F3L100R12W2H3B11BPSA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 100A 375W |
| F3L11MR12W2M1B65BOMA1 | Infineon Technologies | 35,000 | LOW POWER EASY |
| F3L11MR12W2M1B74BOMA1 | Infineon Technologies | 21 | LOW POWER EASY |
| F3L11MR12W2M1C01BOMA1 | Infineon Technologies | 35,000 | IC SIC MOSFET LOW POWER |
| F3L11MR12W2M1HPB19BPSA1 | Infineon Technologies | 35,000 | LOW POWER EASY |
| F3L150R07W2H3B11BPSA1 | Infineon Technologies | 10 | LOW POWER EASY AG-EASY2B-411 |
| F3L150R12W2H3B11BPSA1 | Infineon Technologies | 13 | IGBT MOD 1200V 75A 500W |
| F3L150R12W2H3BOMA1 | Infineon Technologies | 1,030 | F3L150R12W2H3B - IGBT |
| F3L15MR12W2M1B69BOMA1 | Infineon Technologies | 35,000 | LOW POWER EASY |
| F3L15R12W2H3B27BOMA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 20A 145W |
