IGLD60R070D1AUMA1

制造商 :

Infineon Technologies

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

15A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

380 pF @ 400 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-LDFN Exposed Pad

Power Dissipation (Max) :

114W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

-

Supplier Device Package :

PG-LSON-8-1

Technology :

GaNFET (Gallium Nitride)

Vgs (Max) :

-10V

Vgs(th) (Max) @ Id :

1.6V @ 2.6mA