STU10P6F6

制造商 :

STMicroelectronics

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.4 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

340 pF @ 48 V

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation (Max) :

35W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

160mOhm @ 5A, 10V

Supplier Device Package :

TO-251 (IPAK)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA