BSC010N04LSCATMA1
- 制造商零件号
- BSC010N04LSCATMA1
- 包装/案例
- -
- 描述
- DIFFERENTIATED MOSFETS
- 库存
- 35000
请求报价(RFQ)
- * 联系人姓名:
- 公司:
- * 电子邮件:
- 电话:
- 评论:
- 制造商 :
- Infineon Technologies
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 282A (Tc)
- Drain to Source Voltage (Vdss) :
- -
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- -
- Operating Temperature :
- -
- Package / Case :
- -
- Power Dissipation (Max) :
- -
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- -
- Technology :
- -
- Vgs (Max) :
- -
- Vgs(th) (Max) @ Id :
- -
- 数据列表
- BSC010N04LSCATMA1
制造商相关产品
目录相关产品
相关产品
部分 | 制造商 | 库存 | 描述 |
---|---|---|---|
BSC004NE2LS5ATMA1 | Infineon Technologies | 35,000 | TRENCH <= 40V |
BSC005N03LS5ATMA1 | Infineon Technologies | 35,000 | TRENCH <= 40V |
BSC005N03LS5IATMA1 | Infineon Technologies | 35,000 | TRENCH <= 40V |
BSC007N04LS6ATMA1 | Infineon Technologies | 9,133 | MOSFET N-CH 40V 100A TDSON-8-6 |
BSC007N04LS6SCATMA1 | Infineon Technologies | 35,000 | TRENCH <= 40V |
BSC009N04LSSCATMA1 | Infineon Technologies | 35,000 | TRENCH <= 40V |
BSC009NE2LS5ATMA1 | Infineon Technologies | 35,000 | MOSFET N-CH 25V 41A/100A TDSON |
BSC009NE2LS5IATMA1 | Infineon Technologies | 2,369 | MOSFET N-CH 25V 40A/100A TDSON |
BSC009NE2LSATMA1 | Infineon Technologies | 35,000 | MOSFET N-CH 25V 41A/100A TDSON |
BSC010N04LS6ATMA1 | Infineon Technologies | 5,275 | MOSFET N-CH 40V 40A/100A TDSON |
BSC010N04LSATMA1 | Infineon Technologies | 35,000 | MOSFET N-CH 40V 38A/100A TDSON |
BSC010N04LSIATMA1 | Infineon Technologies | 35,000 | MOSFET N-CH 40V 37A/100A TDSON |
BSC010N04LSTATMA1 | Infineon Technologies | 35,000 | MOSFET N-CH 40V 39A/100A TDSON |
BSC010NE2LSATMA1 | Infineon Technologies | 4,837 | MOSFET N-CH 25V 39A/100A TDSON |
BSC010NE2LSIATMA1 | Infineon Technologies | 18,665 | MOSFET N-CH 25V 38A/100A TDSON |