SCT4026DRC15

制造商 :

ROHM Semiconductor

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

56A (Tc)

Drain to Source Voltage (Vdss) :

750 V

Drive Voltage (Max Rds On, Min Rds On) :

18V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

94 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds :

2320 pF @ 500 V

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Package / Case :

TO-247-4

Power Dissipation (Max) :

176W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

34mOhm @ 29A, 18V

Supplier Device Package :

TO-247-4L

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+21V, -4V

Vgs(th) (Max) @ Id :

4.8V @ 15.4mA