PMZB290UNE2YL

制造商 :

Nexperia

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

1.2A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.4 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

46 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-XFDFN

Power Dissipation (Max) :

350mW (Ta), 5.43W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

320mOhm @ 1.2A, 4.5V

Supplier Device Package :

DFN1006B-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

950mV @ 250µA