RFL1N12

制造商 :

Harris Corporation

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

1A (Tc)

Drain to Source Voltage (Vdss) :

120 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

200 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-205AF Metal Can

Power Dissipation (Max) :

8.33W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.9Ohm @ 1A, 10V

Supplier Device Package :

TO-205AF (TO-39)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA