RQA0002DNSTB-E

制造商 :

Renesas Electronics Corporation

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

3.8A (Ta)

Drain to Source Voltage (Vdss) :

16 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

102 pF @ 0 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

3-DFN Exposed Pad

Power Dissipation (Max) :

15W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

-

Supplier Device Package :

2-HWSON (5x4)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±5V

Vgs(th) (Max) @ Id :

750mV @ 1mA