RYM002N05T2CL

制造商 :

ROHM Semiconductor

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

200mA (Ta)

Drain to Source Voltage (Vdss) :

50 V

Drive Voltage (Max Rds On, Min Rds On) :

0.9V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

26 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-723

Power Dissipation (Max) :

150mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.2Ohm @ 200mA, 4.5V

Supplier Device Package :

VMT3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

800mV @ 1mA