NXH010P120MNF1PNG

制造商 :

onsemi

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

114A (Tc)

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

454nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds :

4707pF @ 800V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

Module

Power - Max :

250W (Tj)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

14mOhm @ 100A, 20V

Supplier Device Package :

-

Vgs(th) (Max) @ Id :

4.3V @ 40mA