SIR770DP-T1-GE3

制造商 :

Vishay

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

8A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® SO-8 Dual

Power - Max :

17.8W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

21mOhm @ 8A, 10V

Supplier Device Package :

PowerPAK® SO-8 Dual

Vgs(th) (Max) @ Id :

2.8V @ 250µA