NSB9435T1G

制造商 :

onsemi

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 单，预偏置

Current - Collector (Ic) (Max) :

3 A

Current - Collector Cutoff (Max) :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

125 @ 800mA, 1V

Frequency - Transition :

110 MHz

Mounting Type :

Surface Mount

Package / Case :

TO-261-4, TO-261AA

Power - Max :

720 mW

Product Status :

Active

Resistor - Base (R1) :

10 kOhms

Resistor - Emitter Base (R2) :

-

Supplier Device Package :

SOT-223 (TO-261)

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

550mV @ 300mA, 3A

Voltage - Collector Emitter Breakdown (Max) :

30 V