BSS5130T116

制造商 :

ROHM Semiconductor

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 100mA, 2V

Frequency - Transition :

320MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

200 mW

Product Status :

Obsolete

Supplier Device Package :

SST3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

380mV @ 25mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

30 V