2N1711
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- 制造商 :
- Microchip Technology
- 产品分类 :
- 分立半导体产品 > 晶体管 - 双极 (BJT) - 单
- Current - Collector (Ic) (Max) :
- 500 mA
- Current - Collector Cutoff (Max) :
- 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Frequency - Transition :
- -
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Power - Max :
- 800 mW
- Product Status :
- Active
- Supplier Device Package :
- TO-5
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- 数据列表
- 2N1711
制造商相关产品
目录相关产品
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部分 | 制造商 | 库存 | 描述 |
---|---|---|---|
2N1700 | Harris Corporation | 35,000 | NPN TRANSISTOR |
2N1700 | Microchip Technology | 35,000 | NPN TRANSISTOR |
2N1701 | Microchip Technology | 35,000 | NPN TRANSISTOR |
2N1702 | Microchip Technology | 35,000 | NPN TRANSISTOR |
2N1711 | Solid State Inc. | 4,600 | TRANS NPN 130V 1A TO39 |
2N1711 | STMicroelectronics | 35,000 | TRANS NPN 50V 0.5A TO39 |
2N1711 PBFREE | Central Semiconductor | 2,044 | TRANS NPN 50V 0.5A TO39 |
2N1711S | Microchip Technology | 35,000 | NPN TRANSISTOR |
2N1714 | Microchip Technology | 35,000 | POWER BJT |
2N1714S | Microchip Technology | 35,000 | POWER BJT |
2N1715 | Microchip Technology | 35,000 | POWER BJT |
2N1715S | Microchip Technology | 35,000 | POWER BJT |
2N1716 | Microchip Technology | 35,000 | POWER BJT |
2N1716S | Microchip Technology | 35,000 | POWER BJT |
2N1717 | Microchip Technology | 35,000 | NPN TRANSISTOR |