EMB10FHAT2R
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- 制造商 :
- ROHM Semiconductor
- 产品分类 :
- 分立半导体产品 > 晶体管 - 双极 (BJT) - 阵列，预偏置
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA, 5V
- Frequency - Transition :
- 250MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-563, SOT-666
- Power - Max :
- 150mW
- Product Status :
- Active
- Resistor - Base (R1) :
- 2.2kOhms
- Resistor - Emitter Base (R2) :
- 47kOhms
- Supplier Device Package :
- EMT6
- Transistor Type :
- 2 PNP - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- 数据列表
- EMB10FHAT2R
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