NSVB123JPDXV6T1G

制造商 :

onsemi

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 阵列，预偏置

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA, 10V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

Power - Max :

500mW

Product Status :

Obsolete

Resistor - Base (R1) :

2.2kOhms

Resistor - Emitter Base (R2) :

4.7kOhms

Supplier Device Package :

SOT-563

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50V