IDC08S60CEX1SA3
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- 制造商 :
- Infineon Technologies
- 产品分类 :
- 分立半导体产品 > 二极管 - 整流器 - 单
- Capacitance @ Vr, F :
- 310pF @ 1V, 1MHz
- Current - Average Rectified (Io) :
- 8A
- Current - Reverse Leakage @ Vr :
- 100 µA @ 600 V
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 175°C
- Package / Case :
- Die
- Product Status :
- Obsolete
- Reverse Recovery Time (trr) :
- 0 ns
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- Die
- Voltage - DC Reverse (Vr) (Max) :
- 600 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7 V @ 8 A
- 数据列表
- IDC08S60CEX1SA3
制造商相关产品
目录相关产品
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| IDC04S60CEX1SA1 | Infineon Technologies | 35,000 | DIODE SIC 600V 4A SAWN WAFER |
| IDC04S60CEX7SA1 | Infineon Technologies | 35,000 | DIODE GEN PURPOSE SAWN WAFER |
| IDC05S60CEX1SA1 | Infineon Technologies | 35,000 | DIODE SIC 600V 5A SAWN WAFER |
| IDC08D120T6MX1SA2 | Infineon Technologies | 35,000 | DIODE GEN PURP 1.2KV 10A WAFER |
| IDC08S120EX1SA3 | Infineon Technologies | 35,000 | DIODE SCHOTTKY 1.2KV 7.5A WAFER |
| IDC08S120EX7SA1 | Infineon Technologies | 35,000 | DIODE SCHOTTKY 1.2KV 7.5A WAFER |
| IDC08S60CEX1SA2 | Infineon Technologies | 35,000 | DIODE SIC 600V 8A SAWN WAFER |
| IDC08S60CEX7SA1 | Infineon Technologies | 35,000 | DIODE GEN PURPOSE SAWN WAFER |
