IDW20G65C5BXKSA2
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- 制造商 :
- Infineon Technologies
- 产品分类 :
- 分立半导体产品 > 二极管 - 整流器 - 单
- Capacitance @ Vr, F :
- 300pF @ 1V, 1MHz
- Current - Average Rectified (Io) :
- 10A
- Current - Reverse Leakage @ Vr :
- 180 µA @ 650 V
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- -55°C ~ 175°C
- Package / Case :
- TO-247-3
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- 0 ns
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- PG-TO247-3
- Voltage - DC Reverse (Vr) (Max) :
- 650 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7 V @ 10 A
- 数据列表
- IDW20G65C5BXKSA2
制造商相关产品
目录相关产品
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| IDW20C65D2XKSA1 | Infineon Technologies | 12 | DIODE 650V 20A RAPID2 TO247-3 |
| IDW20G120C5BFKSA1 | Infineon Technologies | 35,000 | DIODE 1.2KV 20A RAPID2 TO247-3 |
| IDW20G65C5BXKSA1 | Infineon Technologies | 35,000 | DIODE SCHOTTKY 650V 10A TO247-3 |
| IDW20G65C5FKSA1 | Infineon Technologies | 35,000 | DIODE SCHOTTKY 650V 20A TO247-3 |
| IDW20G65C5XKSA1 | Infineon Technologies | 715 | DIODE SCHOTTKY 650V 20A TO247-3 |
| IDW20S120FKSA1 | Infineon Technologies | 35,000 | DIODE SCHOTTKY 1200V 10A TO247-3 |
| IDW24G65C5BXKSA1 | Infineon Technologies | 35,000 | DIODE SCHOTTKY 650V 12A TO247-3 |
| IDW24G65C5BXKSA2 | Infineon Technologies | 35,000 | DIODE SCHOTTKY 650V 12A TO247-3 |
