1N645-1E3/TR
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- 制造商 :
 - Microchip Technology
 
- 产品分类 :
 - 分立半导体产品 > 二极管 - 整流器 - 单
 
- Capacitance @ Vr, F :
 - -
 
- Current - Average Rectified (Io) :
 - 400mA
 
- Current - Reverse Leakage @ Vr :
 - 50 nA @ 225 V
 
- Diode Type :
 - Standard
 
- Mounting Type :
 - Through Hole
 
- Operating Temperature - Junction :
 - -65°C ~ 175°C
 
- Package / Case :
 - DO-204AH, DO-35, Axial
 
- Product Status :
 - Active
 
- Reverse Recovery Time (trr) :
 - -
 
- Speed :
 - Standard Recovery >500ns, > 200mA (Io)
 
- Supplier Device Package :
 - DO-35 (DO-204AH)
 
- Voltage - DC Reverse (Vr) (Max) :
 - 225 V
 
- Voltage - Forward (Vf) (Max) @ If :
 - 1 V @ 400 mA
 
- 数据列表
 - 1N645-1E3/TR
 
制造商相关产品
目录相关产品
相关产品
| 部分 | 制造商 | 库存 | 描述 | 
|---|---|---|---|
| 1N64 BK | Central Semiconductor | 35,000 | TRANSISTOR | 
| 1N643 | Microchip Technology | 35,000 | SILICON SWITCHING DIODES | 
| 1N645 | NTE Electronics, Inc. | 302 | D-SI 225V .4A | 
| 1N645 | Solid State Inc. | 70 | Diode 4 Amp 225V Do35 | 
| 1N645 | Microchip Technology | 35,000 | SIGNAL OR COMPUTER DIODE | 
| 1N645 BK | Central Semiconductor | 35,000 | TRANSISTOR | 
| 1N645 TR | Central Semiconductor | 35,000 | TRANSISTOR | 
| 1N645-1 | Solid State Inc. | 8,740 | DO 35 4 AMP SILICON RECTFIER | 
| 1N645-1 | Microchip Technology | 35,000 | DIODE GEN PURP 225V 400MA DO35 | 
| 1N645-1/TR | Microchip Technology | 35,000 | SWITCHING | 
| 1N645-1E3 | Microchip Technology | 35,000 | SWITCHING DIODE | 
| 1N645/TR | Microchip Technology | 35,000 | SIGNAL OR COMPUTER DIODE | 
| 1N645A | Microchip Technology | 35,000 | SIGNAL OR COMPUTER DIODE | 
| 1N645A/TR | Microchip Technology | 35,000 | SIGNAL OR COMPUTER DIODE | 
| 1N645UR-1 | Microchip Technology | 35,000 | DIODE GEN PURP 225V 400MA DO213 | 

                                                                                                                        







