GB10SLT12-247D

制造商 :

GeneSiC Semiconductor

产品分类 :

分立半导体产品 > 二极管 - 整流器 - 阵列

Current - Average Rectified (Io) (per Diode) :

12A

Current - Reverse Leakage @ Vr :

50 µA @ 1200 V

Diode Configuration :

1 Pair Common Cathode

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Through Hole

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

TO-247-3

Product Status :

Obsolete

Reverse Recovery Time (trr) :

-

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

TO-247

Voltage - DC Reverse (Vr) (Max) :

1200 V

Voltage - Forward (Vf) (Max) @ If :

1.9 V @ 5 A