MBR600100CT

制造商 :

GeneSiC Semiconductor

产品分类 :

分立半导体产品 > 二极管 - 整流器 - 阵列

Current - Average Rectified (Io) (per Diode) :

300A

Current - Reverse Leakage @ Vr :

1 mA @ 20 V

Diode Configuration :

1 Pair Common Cathode

Diode Type :

Schottky

Mounting Type :

Chassis Mount

Operating Temperature - Junction :

-55°C ~ 150°C

Package / Case :

Twin Tower

Product Status :

Active

Reverse Recovery Time (trr) :

-

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

Twin Tower

Voltage - DC Reverse (Vr) (Max) :

100 V

Voltage - Forward (Vf) (Max) @ If :

880 mV @ 300 A