BSM
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- 制造商 :
- Memory Protection Devices
- 产品分类 :
- 电池产品 > 电池座、夹子、触点
- Battery Cell Size :
- 9V
- Battery Series :
- -
- Battery Type, Function :
- 9V, Snap Contact (Single)
- Features :
- -
- Height Above Board :
- -
- Mounting Type :
- Custom
- Number of Cells :
- -
- Operating Temperature :
- -
- Product Status :
- Active
- Style :
- Contact Snap (Negative)
- Termination Style :
- -
- 数据列表
- BSM
制造商相关产品
目录相关产品
相关产品
| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| BSM-015G-LF | Amphenol | 35,000 | PRESSURE SNESOR 15PSIG SM |
| BSM080D12P2C008 | ROHM Semiconductor | 12 | SIC POWER MODULE-1200V-80A |
| BSM1-C | Panduit Corporation | 35,000 | CONN SPLICE 18-20 AWG CRIMP |
| BSM1-X | Panduit Corporation | 35,000 | CONN SPLICE 18-20 AWG CRIMP |
| BSM100 | Brady Corporation | 35,000 | RUG) BSM100 RUG, 36"X100' |
| BSM100GAL120DLCKHOSA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 205A 835W |
| BSM100GB120DLCHOSA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 100A 830W |
| BSM100GB120DLCHOSA1 | Infineon Technologies | 121 | BSM100GB120 - INSULATED GATE BIP |
| BSM100GB120DLCKHOSA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 100A 830W |
| BSM100GB120DN2B2HOSA1 | Infineon Technologies | 17 | IGBT MODULE |
| BSM100GB120DN2FE325HOSA1 | Infineon Technologies | 60 | BSM100GB120DN2 - IGBT MODULE |
| BSM100GB120DN2HOSA1 | Infineon Technologies | 1,900 | MEDIUM POWER 62MM |
| BSM100GB120DN2HOSA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 150A 800W |
| BSM100GB120DN2K | Infineon Technologies | 35,000 | INSULATED GATE BIPOLAR TRANSISTO |
| BSM100GB120DN2KHOSA1 | Infineon Technologies | 457 | MEDIUM POWER 34MM |
